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LF1006FPL PDF预览

LF1006FPL

更新时间: 2024-10-23 01:22:19
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1108K
描述
10.0 Amperes Insulated Single Glass Passivated Process Avalanche Rectifier Diode

LF1006FPL 数据手册

 浏览型号LF1006FPL的Datasheet PDF文件第2页浏览型号LF1006FPL的Datasheet PDF文件第3页 
LF1006FPL thru LF1010FPL  
LF1006FPL/LF1008FPL/LF1010FPL  
Pb Free Plating Product  
10.0 Amperes Insulated Single Glass Passivated Process Avalanche Rectifier Diode  
ITO-220AC/TO-220F-2L  
Features  
Avalanche energy rated(100% guarantee)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
PhotoVoltaic BY-PASS DIODE  
PhotoVoltaic High-amperage Combiner Boxes  
Alternator(Automotive Wireharness/Capacitor Bank)  
Mechanical Data  
Case: ITO-220AC fully plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Internal Configuration  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
K
A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
Unit  
LF1006FPL  
LF1008FPL  
LF1010FPL  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
600  
420  
800  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IF(AV)  
560  
10  
V
A
Average Rectified Output Current  
@TC = 120°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
250  
A
Forward Voltage  
@IF = 10.0A  
VFM  
IRM  
0.95  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
50  
µA  
Typical Junction Capacitance (Note 2)  
Cj  
100  
pF  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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