Datasheet > LD57100J100R

LD57100J100R

更新时间： 2022-05-14 22:22:32

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
21页	1369K
描述
1 A ultra low-dropout LDO with bias

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LD57100J100R 数据手册

LD57100

Absolute maximum ratings

Table 3. Absolute maximum ratings

Symbol

, V

Parameter

Value

Unit

Input voltage

Output voltage

-0.3 to 7

BIAS

, V , V

OUT

-0.3 to V + 0.3

SNS

Enable input voltage

-0.3 to 7

Internally limited

Output current

OUT

(see I in Table 7. Electrical characteristics)

STG

Storage temperature range

- 40 to 150

°C

Note:

Absolute maximum ratings are those values beyond which damage to the device may occur. Functional

operation under these conditions is not implied. All values are referred to GND.

Table 4. Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-ambient⁽¹⁾

thJA

°C/W

1. We considered the STD JEDEC board 4 layers (2s2p) 101.5 x114.5 mm with a top copper plane of 4x4 mm.

Table 5. ESD performance

Symbol

Parameter

Test conditions

HBM

Value

Unit

ESD

ESD protection voltage

CDM

500

Table 6. Recommended operating conditions

Parameter

Supply input voltage, V

Value

0.6 to 5.5

3 to 5.5

Unit

Supply input voltage, BIAS

Junction temperature range

- 40 to 125

ºC

DS13123 - Rev 5

page 5/21

1 2 3 456 7 8...21

下载PDF

与LD57100J100R相关器件

型号	品牌	描述	获取价格	数据表
LD57100J105R	STMICROELECTRONICS	1 A ultra low-dropout LDO with bias	获取价格
LD57100J110R	STMICROELECTRONICS	1 A ultra low-dropout LDO with bias	获取价格
LD57100J120R	STMICROELECTRONICS	1 A ultra low-dropout LDO with bias	获取价格
LD57100J800R	STMICROELECTRONICS	1 A ultra low-dropout LDO with bias	获取价格
LD57100JR	STMICROELECTRONICS	1 A ultra low-dropout LDO with bias	获取价格
LD5718AC	LEADTREND	Primary-Side Quasi-Resonant Controller,Operating in CV/CC Mode	获取价格