LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This hermetically sealed Transient Voltage Suppressor (TVS) product family
includes a rectifier diode element in series and opposite direction to achieve low
capacitance performance below 100 pF (see Figure 2). The low level of TVS
capacitance may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning effects
per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne
avionics. With virtually instantaneous response, they also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability is
required, two of these low capacitance TVS devices may be used in parallel in
DO-13
(DO-202AA)
opposite directions (anti-parallel) for complete ac protection as shown in Figure 4.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
Unidirectional low-capacitance TVS series for flexible
thru-hole mounting (for bidirectional see Figure 4)
•
•
•
Protection from switching transients and induced RF
Low capacitance for data line protection up to 1 MHz
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
Protection for aircraft fast data rate lines up to Level 5
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
•
•
•
•
Clamps transient in less than 100 pico seconds
Working voltage (VWM) range 6.5 V to 170 V
Hermetic sealed DO-13 metal package
•
•
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: LC6.5 to LC170A
Class 2: LC6.5 to LC150A
Class 3: LC6.5 to LC70A
Class 4: LC6.5 to LC36A
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLC6.5A, etc.
•
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult factory
for other surface mount options)
•
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : LC6.5 to LC90A
Class 2: LC6.5 to LC45 A
Class 3: LC6.5 to LC22A
Class 4: LC6.5 to LC11A
•
•
Plastic axial-leaded equivalents available in the LCE6.5
- LCE170A series in separate data sheet
RoHS Compliant devices available by adding “e3” suffix
•
•
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LC6.5 to LC20A
Class 3: LC6.5 to LC10A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• 1500 Watts at 10/1000 μs with repetition rate of 0.01% or
•
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
less* at lead temperature (TL) 25oC (see Figs. 1, 2, & 4)
• Operating & Storage Temperatures: -65o to +175oC
•
•
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method 2026
• THERMAL RESISTANCE: 50oC/W (Typical) junction to
lead at 0.375 inches (10 mm) from body or 110 oC/W
junction to ambient when mounted on FR4 PC board with
4 mm2 copper pads (1 oz) and track width 1 mm, length
25 mm
POLARITY: Cathode connected to case as shown by
diode symbol (cathode positive for normal operation)
•
•
•
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
• DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” (10
mm) from body (see derating in Fig 3 and note below)
• Solder Temperatures: 260 o C for 10 s (maximum)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright © 2008
Microsemi
Page 1
10-29-2008 REV E
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
5秒后页面跳转
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
AMD宣布全球裁员约1000人，调整战略聚焦增长
英伟达新AI芯片Rubin或提前半年亮相
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
技术参数
数据手册
如果您发现信息不准确，
