Datasheet > LBZT52B13T1G

LBZT52B13T1G

更新时间： 2024-10-29 02:43:31

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
3页	509K
描述
500mw Power Dissipation

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中文翻译

获取价格

数据手册

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LBZT52B13T1G 数据手册

Series

LBZT52B2V0T1G

Features:

*500mw Power Dissipation

*Ideal for Surface Mountted Application

*Zener Breakdown Voltage Range 2.0V to 36V

*Pb-Free package is available

Mechanical Data:

SOD-123

*Case : SOD-123 Molded plastic

*Terminals: Solderable per MIL-STD-202, Method 208

*Polarity: Cathode Indicated by Polarity Band

*Marking: Marking Code (See Specific marking table)

*Weigh: 0.01grams(approx)

Equivalent Circuit Diagram

Cathode

Anode

Maximum Ratings and Electrical Characteristics

(TA=25 C Unless Otherwise Noted)

Characteristics

Symbol

Value

Unit

Total Power Dissipation on FR-5 Board⁽¹⁾

500

305

R JA

C/W

Thermal Resistance Junction to Ambient Air ⁽¹⁾

Forward Voltage @ IF=10mA

0.9

Junction and Storage Temperature Range

Tj,TSTG

-55 to +150

NOTES:

1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm

Device Marking Code

Ratings and Characteristic curves

Device

Marking

Device

Marking

0.6

LBZT52B2V0T1G

LBZT52B9V1T1G

LBZT52B10T1G

LBZT52B11T1G

LBZT52B12T1G

LBZT52B2V2T1G

LBZT52B2V4T1G

0.5

0.4

0.3

0.2

0.1

LBZT52B2V7T1G

LBZT52B3V0T1G

LBZT52B13T1G

LBZT52B15T1G

LBZT52B16T1G

LBZT52B3V3T1G

LBZT52B3V6T1G

LBZT52B3V9T1G

LBZT52B4V3T1G

LBZT52B4V7T1G

LBZT52B18T1G

LBZT52B20T1G

LBZT52B22T1G

LBZT52B24T1G

100

125

150

LBZT52B5V1T1G

LBZT52B5V6T1G

LBZT52B6V2T1G

LBZT52B6V8T1G

LBZT52B7V5T1G

LBZT52B8V2T1G

T_A,AMBIENT TEMPERATURE( C)

FIG. 1 Power Disspation vs Ambient temperaute

LBZT52B27T1G

LBZT52B30T1G

LBZT52B33T1G

LBZT52B36T1G

1/3

Rev :01.06.2018

www.leiditech.com

12 3

中文翻译

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