Series
LBZT52B2V0T1G
Features:
*500mw Power Dissipation
1
*Ideal for Surface Mountted Application
*Zener Breakdown Voltage Range 2.0V to 36V
*Pb-Free package is available
2
Mechanical Data:
SOD-123
*Case : SOD-123 Molded plastic
*Terminals: Solderable per MIL-STD-202, Method 208
*Polarity: Cathode Indicated by Polarity Band
*Marking: Marking Code (See Specific marking table)
*Weigh: 0.01grams(approx)
Equivalent Circuit Diagram
1
2
Cathode
Anode
Maximum Ratings and Electrical Characteristics
(TA=25 C Unless Otherwise Noted)
Characteristics
Symbol
Value
Unit
Total Power Dissipation on FR-5 Board(1)
500
305
PD
R JA
VF
mW
C/W
V
Thermal Resistance Junction to Ambient Air (1)
Forward Voltage @ IF=10mA
0.9
Junction and Storage Temperature Range
Tj,TSTG
-55 to +150
C
2
NOTES:
1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm
Device Marking Code
Ratings and Characteristic curves
Device
Marking
Device
Marking
0.6
LBZT52B2V0T1G
02
LBZT52B9V1T1G
LBZT52B10T1G
LBZT52B11T1G
LBZT52B12T1G
L2
05
15
LBZT52B2V2T1G
LBZT52B2V4T1G
0.5
12
22
32
0.4
0.3
0.2
0.1
LBZT52B2V7T1G
LBZT52B3V0T1G
25
35
LBZT52B13T1G
LBZT52B15T1G
LBZT52B16T1G
42
52
62
72
82
LBZT52B3V3T1G
LBZT52B3V6T1G
LBZT52B3V9T1G
LBZT52B4V3T1G
LBZT52B4V7T1G
45
55
65
LBZT52B18T1G
LBZT52B20T1G
LBZT52B22T1G
LBZT52B24T1G
75
85
0
92
A2
C2
E2
F2
0
25
50
75
100
125
150
O
LBZT52B5V1T1G
LBZT52B5V6T1G
LBZT52B6V2T1G
LBZT52B6V8T1G
LBZT52B7V5T1G
LBZT52B8V2T1G
95
TA,AMBIENT TEMPERATURE( C)
FIG. 1 Power Disspation vs Ambient temperaute
LBZT52B27T1G
LBZT52B30T1G
A5
C5
E5
F5
-
LBZT52B33T1G
LBZT52B36T1G
-
H2
J2
1/3
Rev :01.06.2018
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