Datasheet > LBM5SL

LBM5SL

更新时间： 2024-10-28 22:31:31

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	20K
描述
NPN SILICON RF POWER TRANSISTOR

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中文翻译

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LBM5SL 数据手册

ULBM5SL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI ULBM5SL is Designed for

PACKAGE STYLE .280 4L STUD

FEATURES:

45°

· Omnigold™ Metalization System

MAXIMUM RATINGS

1.7 A

36 V

I_C

V_CBO

V_CER

V_CES

V_EBO

P_DISS

T_J

#8-32 UNC

MINIMUM

inches / mm

MAXIMUM

inches / mm

16 V

DIM

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

36 V

.285 / 7.24

.007 / 0.18

.137 / 3.48

4.0 V

.572 / 14.53

.130 / 3.30

15 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

12 ^OC/W

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

q_JC

ORDER CODE: ASI10681

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 10 mA

I_E= 2.0 mA

V_CE= 10 V

V_CB= 15 V

V_CE= 5.0 V

BV_CES

BV_EBO

I_CER

4.0

R_BE= 50 W

0.5

1.0

100

---

I_CBO

h_FE

I_C= 1.0 A

C_ob

V_CB= 7.5 V

V_CC= 7.5 V

f = 1.0 MHz

f = 470 MHz

P_G

8.5

P_OUT= 5.0 W

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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