Datasheet > LB4S-T3

LB4S-T3

更新时间： 2024-11-09 19:23:23

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	42K
描述
Rectifier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LB4S-T3 数据手册

LB1S – LB10S

0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

WON-TOP ELECTRONICS

Features



Ultra-Slim 1.6mm Max. Case Height



Glass Passivated Die Construction

High Reliability

Low Forward Voltage Drop

High Surge Current Capability

Designed for Surface Mount Application

Plastic Material – UL Flammability 94V-0

MBL-S

Min

Dim

Max

5.10

4.60

0.35

0.20

7.20

1.10

1.60

2.60

0.84

Mechanical Data

4.50

3.60

0.10

—



Case: MBL-S, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

6.40

0.70

1.30

2.20

0.56



Polarity: As Marked on Case

Weight: 0.10 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

LB1S

LB2S

LB4S

LB6S

LB8S LB10S Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current (Note 1) @T_A= 40°C

Average Rectified Output Current (Note 2) @T_A= 40°C

0.8

0.5

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

(JEDEC Method)

IFSM

VFM

Forward Voltage per diode

@I_F= 0.4A

@I_F= 0.8A

1.0

1.1

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

500

IRM

µA

Typical Junction Capacitance per diode (Note 3)

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Ambient (Note 1)

Thermal Resistance Junction to Lead (Note 2)

RθJA

RθJL

134

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Mounted on aluminum substrate PCB with 1.3 x 1.3mm pad areas.

2. Mounted on glass epoxy PCB with 1.3 x 1.3mm pad areas.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2012

www.wontop.com

12 3 4

中文翻译

下载PDF

与LB4S-T3相关器件

型号	品牌	获取价格	描述	数据表
LB4S-T3-LF	WTE	获取价格	Rectifier Diode
LB-5	RICHCO	获取价格	LOCKING BUTTON
LB500	VISHAY	获取价格	RESISTOR, WIRE WOUND, 1.7W, 0.002; 0.005; 0.01; 0.02; 0.05; 1%, 3; 5; 10ppm, 1ohm - 100000
LB-500-100	ETC	获取价格	TYPE LB: 170 through 600 Amperes
LB-500-50	ETC	获取价格	TYPE LB: 170 through 600 Amperes
LB500-S	LEM	获取价格	Current Transducer LB 500-S/SP1
LB500-S/SP1	LEM	获取价格	Current Transducer LB 500-S/SP1
LB500Z	SEOUL	获取价格	GREEN OVAL LAMP LED
LB501	SEOUL	获取价格	INFRARED LAMP LED
LB501	POLYFET	获取价格	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR