是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP28,.3 |
针数: | 28 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.25 | Is Samacsys: | N |
最长访问时间: | 25 ns | 其他特性: | AUTOMATIC POWER-DOWN; LOW POWER OPERATION; BATTERY BACKUP OPERATION |
I/O 类型: | COMMON | JESD-30 代码: | R-PDIP-T28 |
JESD-609代码: | e0 | 长度: | 35.052 mm |
内存密度: | 262144 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 28 | 字数: | 32768 words |
字数代码: | 32000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 32KX8 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP28,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 4.572 mm |
最大待机电流: | 0.0002 A | 最小待机电流: | 2 V |
子类别: | SRAMs | 最大压摆率: | 0.12 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
L7C199PI25L | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | |
L7C199TC12L | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 12ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
L7C199TC15 | ETC |
获取价格 |
x8 SRAM | |
L7C199TC15L | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 15ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
L7C199TC20 | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 20ns, CMOS, CQCC32, CERAMIC, LCC-32 | |
L7C199TC20L | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 20ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
L7C199TC25 | ETC |
获取价格 |
x8 SRAM | |
L7C199TC25L | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 25ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
L7C199TC35 | LOGIC |
获取价格 |
Standard SRAM, 32KX8, 35ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 | |
L7C199TC-35 | ETC |
获取价格 |
x8 SRAM |