Datasheet > L6571

L6571

更新时间： 2024-11-29 02:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	234K
描述
High voltage half bridge driver with oscillator

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L6571 数据手册

L6571

High voltage half bridge driver with oscillator

Features

■ High voltage rail up to 600 V

■ BCD off line technology

■ 15.6 V Zener clamp on Vs

■ Driver current capability:

– Sink current = 270 mA

– Source current = 170 mA

DIP-8

SO8

can be programmed using external resistor and

capacitor.

■ Very low start up current: 150 mA

■ Undervoltage lockout with hysteresis

■ Programmable oscillator frequency

The internal circuitry of the device allows it to be

driven also by external logic signal.

The output drivers are designed to drive external

nchannel power MOSFET and IGBT. The internal

logic assures a dead time to avoid cross-

conduction of the power devices.

■ Dead time 1.25 μs (L6571A) or 0.72 μs

(L6571B)

■ dV/dt immunity up to 50 V/ns

■ ESD protection

Two version are available: L6571A and L6571B.

They differ in the internal dead time: 1.25μs and

0.72 μs (typ.)

Description

The device is a high voltage half bridge driver with

built in oscillator. The frequency of the oscillator

Figure 1.

Block diagram

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January 2010

Doc ID 4946 Rev 6

1/12

www.st.com

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