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L6571BD PDF预览

L6571BD

更新时间: 2024-09-22 22:31:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 振荡器驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管高压PC
页数 文件大小 规格书
7页 62K
描述
HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

L6571BD 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:1.55Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:179407
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:ST SO-8_2
Samacsys Released Date:2015-04-13 16:52:24Is Samacsys:N
其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C标称输出峰值电流:0.275 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:12 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:16.6 V最小供电电压:10 V
标称供电电压:12 V表面贴装:YES
技术:BCDMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
Base Number Matches:1

L6571BD 数据手册

 浏览型号L6571BD的Datasheet PDF文件第2页浏览型号L6571BD的Datasheet PDF文件第3页浏览型号L6571BD的Datasheet PDF文件第4页浏览型号L6571BD的Datasheet PDF文件第5页浏览型号L6571BD的Datasheet PDF文件第6页浏览型号L6571BD的Datasheet PDF文件第7页 
L6571A  
L6571B  
HIGH VOLTAGE HALF BRIDGE  
DRIVER WITH OSCILLATOR  
TECHNOLOGY: BCD ”OFF-LINE”  
FLOATING SUPPLY VOLTAGE UP TO 600V  
GND REFERRED SUPPLY VOLTAGE UP TO  
18V  
DRIVER CURRENT CAPABILITY:  
- SINK CURRENT = 270mA  
- SOURCE CURRENT = 170mA  
VERYLOW START UP CURRENT: 150µA  
VERYLOW OPERATING CURRENT: <2mA  
UNDERVOLTAGE LOCKOUT  
PROGRAMMABLE OSCILLATOR  
FREQUENCY  
Minidip  
SO8  
ORDERING NUMBERS:  
L6571A  
L6571B  
L6571AD  
L6571BD  
dV/dt IMMUNITY UP TO ± 50V/ns  
and capacitor.  
DESCRIPTION  
The output drivers are designed to drive external  
n-channel power MOSFET and IGBT. The inter-  
nal logic assures a minimum dead time to avoid  
cross-conduction of the power devices.  
The device is a high voltage half bridge driver  
with built-in oscillator. The frequency of the oscil-  
lator can be programmed using external resistor  
BLOCK DIAGRAM  
H.V.  
RHV  
CVS  
VS  
BOOT  
HVG  
BIAS  
LEVEL  
CBOOT  
REGULATOR  
SHIFTER  
HIGH  
SIDE  
DRIVER  
VS  
RF  
CF  
BUFFER  
OUT  
LVG  
LOAD  
RF  
CF  
COMP  
VS  
LOW SIDE  
DRIVER  
COMP  
LOGIC  
GND  
D96IN433  
1/7  
June 2000  

L6571BD 替代型号

型号 品牌 替代类型 描述 数据表
L6569D STMICROELECTRONICS

完全替代

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
L6569AD STMICROELECTRONICS

完全替代

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
L6569 STMICROELECTRONICS

完全替代

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

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