Datasheet > L6491DTR

L6491DTR

更新时间： 2024-11-13 01:12:47

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意法半导体 - STMICROELECTRONICS		/
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描述
Power supply unit

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L6491DTR 数据手册

L6491

High voltage high and low-side 4 A gate driver

Datasheet - production data

Applications

 Motor driver for home appliances, factory

automation, industrial drives and fans

 HID ballasts

 Power supply unit

 Induction heating

 Wireless chargers

 Industrial inverters

 UPS

SO-14

Features

 High voltage rail up to 600 V

 dV/dt immunity ± 50 V/ns in full temperature

Description

range

The L6491 is a high voltage device manufactured

with the BCD6 “OFF-LINE” technology. It is

a single-chip half-bridge gate driver for N-channel

power MOSFET or IGBT.

 Driver current capability: 4 A source/sink

 Switching times 15 ns rise/fall with 1 nF load

 3.3 V, 5 V TTL/CMOS inputs with hysteresis

 Integrated bootstrap diode

The high-side (floating) section is designed to

stand a voltage rail up to 600 V. The logic inputs

are CMOS/TTL compatible down to 3.3 V for easy

interfacing microcontroller/DSP.

 Comparator for fault protections

 Smart shutdown function

 Adjustable deadtime

An integrated comparator is available for fast

protection against overcurrent, overtemperature,

etc.

 Interlocking function

 Compact and simplified layout

 Bill of material reduction

Table 1. Device summary

 Effective fault protection

Order code

Package

Packaging

 Flexible, easy and fast design

L6491D

SO-14

Tube

L6491DTR

Tape and reel

March 2015

DocID024832 Rev 1

1/24

This is information on a product in full production.

www.st.com

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