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L2TVS78A PDF预览

L2TVS78A

更新时间: 2024-10-28 20:03:43
品牌 Logo 应用领域
固锝 - GOOD-ARK 二极管
页数 文件大小 规格书
5页 190K
描述
Trans Voltage Suppressor Diode, 200W, 78V V(RWM), Unidirectional, 1 Element, Silicon,

L2TVS78A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.79其他特性:EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压:95.8 V最小击穿电压:86.7 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F2
湿度敏感等级:1最大非重复峰值反向功率耗散:200 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1 W
最大重复峰值反向电压:78 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

L2TVS78A 数据手册

 浏览型号L2TVS78A的Datasheet PDF文件第2页浏览型号L2TVS78A的Datasheet PDF文件第3页浏览型号L2TVS78A的Datasheet PDF文件第4页浏览型号L2TVS78A的Datasheet PDF文件第5页 
L2TVS10.0A thru L2TVS190A  
Surface Mount Transient Voltage Suppressors  
Peak Pulse Power 200W Stand-off Voltage 10.0 to 190V  
Features  
• Glass passivated junction  
• Moisture sensitivity: level 1, per J-STD-020  
• Solder
 
dip 260 °C
 
10 s  
,
• Low profiletypical thickness 1.0mm  
• Polarity:Uni-directional  
eSGB (SMAF)  
• Excellent clamping capability and Fast response time  
• 200W peak pulse power capability with a 10/1000us waveform  
Typical Applications  
Use in sensitive electronics protection against voltage transients induced by inductive load  
switching and lighting on Ics,MOSFET,signal lines of sensor units for consumer, computer,  
industrial and telecommunication  
Maximum Ratings (TA = 25 °C unless otherwise noted)  
Value  
Minimum 200  
See Next Table  
0.5  
Unit  
W
Parameter  
Symbol  
Peak power dissipation with a  
10/1000us waveform  
1)  
PPPM  
Peak pulse current with a  
10/1000us waveform  
1)  
A
IPPM  
Steady state power dissipation on  
infinite heatsink  
2)  
W
PM(AV)  
Peak forward surge current,8.3ms  
single half sine-wave uni-  
IFSM  
VF  
30.0  
A
Maximum instantaneous forward  
voltage at 25A  
3.5  
V
Thermal resistance junction to  
ambient air  
80  
Rthja  
/W  
Operating junction and storage  
temperature range  
-65 to +150  
TJ, TSTG  
Notes:  
1) Non-repetitive current,per fig.3 and derated above TA=25℃ per fig.4.  
2) Power dissipation mounted on recommended pad layout  
3) Thermal resistance from junction to ambient,mounted on PCB with 8.0×8.0mm copper pads  
www.goodark.com  
1/5  
2014.04-Rev.A  

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