Datasheet > L2008V6RP

L2008V6RP

更新时间： 2024-11-09 18:40:31

品牌	Logo	应用领域
力特 - LITTELFUSE		三端双向交流开关
页数	文件大小	规格书
8页	227K
描述
4 Quadrant Logic Level TRIAC, 200V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3

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L2008V6RP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-251AA	包装说明：	IN-LINE, R-PSIP-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.30.00.80
风险等级：	5.64	其他特性：	HIGH RELIABILITY
外壳连接：	MAIN TERMINAL 2	配置：	SINGLE
JEDEC-95代码：	TO-251AA	JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e3	湿度敏感等级：	2
元件数量：	1	端子数量：	3
最高工作温度：	110 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	最大均方根通态电流：	8 A
断态重复峰值电压：	200 V	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	10
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

L2008V6RP 数据手册

IZED

Selected Packag

File #E71639

U.L. RECOGN

TO-92

*TO-220

Isolated

3-lead

Compak

TO-252

D-Pak

TO-202

MT2

MT1

TO-251

V-Pak

Sensitive Triacs

(0.8 A to 8 A)

G^E1eneral Description

Teccor's line of sensitive gate triacs includes devices with current

capabilities through 8 A. Voltage ranges are available from 200 V

to 600 V. This line features devices with guaranteed gate control

in Quadrants II and IV as well as control in the commonly used

Quadrants I and III. Four-quadrant control devices require

sensitive gate triacs. They can be controlled by digital circuitry

where positive-only or negative-only pulses must control AC

current in both directions through the device. Note that triacs with

low I_GTvalues in Quadrants II and IV will have lower dv/dt

characteristics.

The sensitive gate triac is a bidirectional AC switch and is gate

controlled for either polarity of main terminal voltage. It is used

primarily for AC switching and phase control applications such as

motor speed controls, temperature modulation controls, and

lighting controls.

The epoxy TO-92 and TO-220 configurations feature Teccor's

electrically-isolated construction where the case or mounting tab

is internally isolated from the semiconductor chip and lead

attachments. Non-isolated epoxy TO-202 packages are available

as well as TO-251 and surface mount TO-252 (D-Pak). Tape-

and-reel capability and tube packing also are available. See

“Packing Options” section of this catalog.

All Teccor triacs have glass-passivated junctions. This glassing

process prevents migration of contaminants and ensures long-

term device reliability with parameter stability.

Variations of devices covered in this data sheet are available for

custom design applications. Consult factory for more information.

Features

•

Electrically-isolated packages

Glass-passivated junctions ensure long device

reliability and parameter stability

Voltage capability — up to 600 V

Surge capability — up to 80 A

•

Four-quadrant gating guaranteed

Compak Sensitive Gate Triac

•

Surface mount package — 0.8 A and 1 A series

New small profile three-leaded Compak package

Packaged in embossed carrier tape with 2,500

devices per reel

•

Can replace SOT-223

Thyristor Product Catalog

E1 - 1

http://www.littelfuse.com

+1 972-580-7777

12 3 4 5 6 7 8

中文翻译

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与L2008V6RP相关器件

型号	品牌	获取价格	描述	数据表
L2008V6TP	LITTELFUSE	获取价格	4 Quadrant Logic Level TRIAC, 200V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3
L2008V8	TECCOR	获取价格	Sensitive Triacs (0.8A to 8A)
L2008V8	LITTELFUSE	获取价格	Sensitive Triacs (0.8 A to 8 A)
L2008V8TP	LITTELFUSE	获取价格	4 Quadrant Logic Level TRIAC, 200V V(DRM), 8A I(T)RMS, TO-251AA, VPAK-3
L200AD11-ST	ALTECH	获取价格	Extended/Direct Handle Motor Disconnect Switch
L200BB12VC	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L200BB12VD	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L200BB12VE	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L200BB12VF	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L200BB12VI	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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