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KZT3055

更新时间: 2024-10-14 05:41:11
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 39K
描述
2.0W Surface Mount Complementary NPN Silicon Power Transistor

KZT3055 数据手册

  
SMD Type  
Transistors  
2.0W Surface Mount Complementary  
NPN Silicon Power Transistor  
KZT3055(CZT3055)  
SOT-223  
Unit: mm  
Features  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
High current (max. 6A).  
Low voltage (max. 60V).  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
0.70  
-0.1  
3 Emitter  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector - emitter votage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCER  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
100  
70  
V
60  
V
7
V
Collector current  
6
A
Base current  
IB  
3
2
A
power dissipation  
PD  
W
/W  
Thermal resistance Junction-to-Ambient  
Junction temperature  
Storage temperature  
R
JA  
Tj  
Tstg  
62.5  
150  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
60  
Typ  
Max  
Unit  
V
Collector to emitter breakdown voltage  
Collector to emitter breakdown voltage  
VCEO  
VCER  
ICEO  
ICEV  
IC=30mA  
70  
V
IC=30mA,RBE=100  
VCE=30V  
700  
1.0  
5.0  
70  
A
Collctor cutoff current  
Emitter cutoff current  
DC current gain  
VCE=100V,VEB=1.5V  
VEB = 7.0 V  
mA  
m A  
IEBO  
IC = 4.0A; VCE =4.0 V  
IC = 6.0A; VCE = 4.0V  
IC = 4.0A; IB =400mA  
20  
hFE  
5.0  
Collector to emitter saturation voltage  
Base to emitter ON voltage  
Transition frequency  
VCE(sat)  
1.1  
1.5  
V
V
VBE(on) VCE=4.0V,IC=4.0A  
IC= 500mA; VCE =10V; f = 1.0 MHz  
fT  
2.5  
MHz  
1
www.kexin.com.cn  

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