Datasheet > KX7N10L

KX7N10L

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1057K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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KX7N10L 数据手册

SMD Type

MOSFET

N-Channel MOSFET

KX7N10L

■ Features

●

VDS (V) = 100V

ID = 1.7 A (VGS = 10V)

+0 .2

-0 .2

＜

350m (V = 10V), I =0.85A

DS(ON)

+0 .3

-0 .3

380m (V = 5V), I =0.85A

1.Gate

2.Drain

3.Source

4.Drain

! "

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

100

Unit

Gate-Source Voltage

VGS

±20

Continuous Drain Current

- Continuous (TC = 25°C)

- Continuous (TC= 70°C)

1.7

1.36

6.8

Pulsed Drain Current

IDM

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Avalanche Current

0.2

IAR

1.7

Power Dissipation (T = 25°C)

2.0

- Derate above 25°C

0.016

62.5

6.0

℃

Thermal Resistance.Junction- to-Ambient

Peak Diode Recovery dv/dt

RthJA

dv/dt

V/ns

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

300

℃

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

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中文翻译

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