Datasheet > KX10N60F

KX10N60F

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1596K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KX10N60F 数据手册

DIP Type

MOSFET

N-Channel MOSFET

KX10N60F

Unit: mm

TO-220F

±0.20

2.54

8^±0

±0.20

0.70

φ3.

■ Features

● V^{DS (V)}= 600V

● ID = 10 A (VGS = 10V)

±0.20

2.76

● R^DS(ON)＜ 730mΩ (VGS = 10V)

● Qg(typ.)= 29.5nC

1.47max

±0.20

0.50

±0.20

0.80

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

600

±30

Unit

Gate-Source Voltage

Tc=25℃

Tc=70℃

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

(Note.1)

Tc=25℃

0.37

16.5

400

4.5

Derate above 25℃

W/℃

Repetitive Avalanche Energy

Single Pulsed Avalanche Energy (Note.1)

Peak Diode Recovery dv/dt (Note.3)

(Note.2)

dv/dt

V/ns

℃/W

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

62.5

2.7

150

℃

Storage Temperature Range

stg

-55 to 150

Note.1: L =5.5mH, I

S=10A, V^DD=50V, RG=25Ω, Starting Tj=25℃.

Note.2: Repetivity rating : Pulse width limited by junction temperature.

Note.3: IS≤10A, dI/dt≤200A/㎲, V^DD≤BV^DSS, Starting Tj=25℃.

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