Datasheet > KTC3198

KTC3198

更新时间： 2024-02-01 02:03:03

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	250K
描述
General Purpose Transistor

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中文翻译

获取价格

技术参数
数据手册

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KTC3198 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.6	Base Number Matches：	1

KTC3198 数据手册

KTC3198

0.15A , 60V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

TO-92

ꢀ

V(BR)CBO=60V

CLASSIFICATION OF h_{FE (1)}

KTC3198-O

KTC3198-Y KTC3198-GR

120~240 200~400

Product-Rank

70~140

Range

1Emitter

2Base

3Collector

Collector

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

Min.

Max.

Base

4.70

3.81

0.56

0.30

0.51

1.27 TYP.

1.10

2.42

0.36

1.40

2.66

0.76

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

°C

Collector Current

I_CM

150

Power Dissipation

P_CM

625

Junction, Storage Temperature

T_J, T_STG

125, -55~125

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ. Max.

Unit

Test condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

I_C=100µA, I_E=0

I_C=5mA, I_B=0

I_E=100µA, I_C=0

V_CB=60V, I_E=0

0.1

400

µA

Emitter Cut-Off Current

I_EBO

V_EB=5V, I_C=0

V_CE=6V, I_C=2mA

V_CE=6V, I_C=150mA

I_C=100mA, I_B=10mA

DC Current Gain

h_FE

100

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

V_CE(sat)

V_BE(sat)

f_T

0.1

0.25

MHz V_CE=10V, I_C=1mA, f=30MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Nov-2011 Rev.B

Page 1 of 2

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