Datasheet > KTC2875_09

KTC2875_09

更新时间： 2024-02-25 05:06:30

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	49K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTC2875_09 数据手册

SEMICONDUCTOR

KTC2875

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

FOR MUTING AND SWITCHING APPLICATION.

FEATURES

· High Emitter-Base Voltage : V_EBO=25V(Min.)

· High Reverse h_FE

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-2mA)

· Low on Resistance : R_ON=1Ω (Typ.), (I_B=5mA)

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

MAXIMUM RATING (Ta=25℃)

0.20 MIN

1.00+0.20/-0.10

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

1. EMITTER

2. BASE

3. COLLECTOR

300

℃

I_B

Base Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

150

SOT-23

T_j

150

T_stg

-55∼ 150

℃

Marking

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

I_CBO

I_EBO

TEST CONDITION

MIN.

TYP.

MAX.

0.1

1200

0.3

UNIT

μA

V_CB=50V, I_E=0

V_EB=25V, I_C=0

μA

h_FE

V_CE=2V, I_C=4mA

I_C=30mA, I_B=3mA

V_CE=2V, I_C=4mA

V_CE=6V, I_C=4mA

V_CB=10V, I_E=0, f=1MHz

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

200

V_CE(sat)

V_BE

0.042

0.61

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

4.8

OUTPUT

t_on

t_stg

t_f

Turn-on Time

160

500

130

4kΩ

INPUT

Switching

Storage Time

Time

10V

1µs

DUTY CYCLE 2%

=12V

Fall Time

=-3V

Note : h_FEClassification A: 200~700, B: 350∼ 1200

2009. 3. 12

Revision No : 3

1/3

12 3

中文翻译

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