Datasheet > KTC3192O

KTC3192O

更新时间： 2024-11-19 15:36:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	309K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KTC3192O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

KTC3192O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

KTC3192 TRANSISTOR(NPN)

FEATURE

1.EMITTER

2. COLLECTOR

3. BASE

High Power Gain: Gpe=29dB(Typ)(f=10.7MH_Z)

MAXIMUM RATINGS (T^a=25 ℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

℃

P_C

625

150

-55-150

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA, I_E=0

I_C= 1mA , I_B=0

I_E= 100μA, I_C=0

V_CB= 35V , I_E=0

V_EB= 4V , I_C=0

V_CE=12 V, I_C= 2mA

I_C= 10mA, I_B= 1mA

0.1

1.0

240

0.4

1.0

400

3.2

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

_CE= 10 V, I_C= 1mA

100

1.4

MHz

Collector output capacitance

V_CB=10 V,I_E=0,f=1MH_Z

C_ob

V_CE=10V,I_C=1mA,

f=30MH_Z

Collector-base time constant

Power gain

C_c.rbb’

Gpe

V_CC=6V,I_C=1mA,

f=10.7MH_Z

CLASSIFICATION OF h_FE

Rank

Range

40-80

70-140

120-240

A,June,2011

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