Datasheet > KT11A55D

KT11A55D

更新时间： 2024-11-11 05:34:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	181K
描述
N沟道11A550VMOS管，RON(DS)=0.52Ω

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KT11A55D 数据手册

TK11A55D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK11A55D

Switching Regulator Applications

Unit: mm

•

Low drain-source ON-resistance: R

= 0.52 Ω (typ.)

DS (ON)

High forward transfer admittance: ⎪Y ⎪ = 6.0 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 550 V)

DSS

Enhancement mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

550

±30

DSS

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

1: Gate

2: Drain

3: Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

276

(Note 2)

JEDEC

JEITA

⎯

Avalanche current

4.5

SC-67

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

TOSHIBA

2-10U1B

Storage temperature range

−55 to 150

stg

Weight: 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

2.78

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 3.94 mH, R = 25 Ω, I = 11 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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