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KSR1004BU PDF预览

KSR1004BU

更新时间: 2024-02-24 08:37:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
4页 33K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSR1004BU 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.55其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KSR1004BU 数据手册

 浏览型号KSR1004BU的Datasheet PDF文件第2页浏览型号KSR1004BU的Datasheet PDF文件第3页浏览型号KSR1004BU的Datasheet PDF文件第4页 
KSR1004  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit Driver Circuit,  
Built in bias Resistor (R =47K, R =47K)  
1
2
Complement to KSR2004  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Equivalent Circuit  
C
R1  
B
R2  
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
10  
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =100µA, I =0  
50  
C
B
I
V
=40V, I =0  
0.1  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =5mA  
68  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =0.5mA  
V
CE  
C
B
f
V
=10V, I =5mA  
250  
3.7  
MHz  
pF  
T
CE  
C
C
V
=10V, I =0  
E
ob  
CB  
f=1.0MHz  
V (off)  
Input Off Voltage  
Input On Voltage  
Input Resistor  
V
V
=5V, I =100µA  
0.5  
V
V
I
CE  
CE  
C
V (on)  
=0.3V, I =2mA  
3
I
C
R
32  
47  
1
62  
1.1  
KΩ  
1
R /R  
Resistor Ratio  
0.9  
1
2
©2002 Fairchild Semiconductor Corporation  
Rev. A2, October 2002  

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