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KSH13003A PDF预览

KSH13003A

更新时间: 2024-01-18 01:03:11
品牌 Logo 应用领域
SEMIHOW 开关高压
页数 文件大小 规格书
5页 369K
描述
High Voltage Switch Mode Applications

KSH13003A 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknown风险等级:5.91
Is Samacsys:N最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

KSH13003A 数据手册

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KSH13003A  
High Voltage Switch Mode Applications  
• High Speed Switching  
• Suitable for Switching Regulator and Motor Control  
1.5 Amperes  
NPN Silicon Power Transistor  
30 Watts  
Absolute Maximum Ratings TC=25unless otherwise noted  
TO-220  
1. Base  
CHARACTERISTICS  
SYMBOL  
RATING  
UNIT  
2. Collector  
3. Emitter  
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
ICP  
IB  
PC  
TJ  
TSTG  
700  
400  
9
1.5  
3
0.75  
30  
150  
-65~150  
V
V
V
A
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulse)  
Base Current  
Collector Dissipation(Tc=25)  
Junction Temperature  
Storage Temperature  
A
1
2
3
W
Electrical Characteristics TC=25unless otherwise noted  
CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter Cut-off Current  
SYMBOL  
Test Condition  
Min  
700  
400  
Typ.  
Max  
Unit  
V
VCBO  
IC=500μA, IE=0  
VCEO  
IC=5mA, IB=0  
VEB=9V,IC=0  
V
IEBO  
10  
35  
*DC Current Gain  
hFE1  
hFE2  
VCE=2V,IC=0.5A  
VCE=2V,IC=1A  
9
5
*Collector-Emitter Saturation Voltage  
*Base-Emitter Saturation Voltage  
VCE(sat)  
IC=0.5A,IB=0.1A  
IC=1A,IB=0.25A  
IC=1.5A,IB=0.5A  
0.5  
1.0  
3.0  
V
V
V
VBE(sat)  
IC=0.5A,IB=0.1A  
IC=1A,IB=0.25A  
1.0  
1.2  
V
V
VCB=10V, f=0.1MHz  
VCE=10V,IC=0.1A  
Output Capacitance  
Current Gain Bandwidth Product  
Turn on Time  
Cob  
fT  
21  
4
ton  
tstg  
tF  
1.1  
4.0  
0.7  
Vcc=125V, Ic=1A  
Storage Time  
I
B1=0.2A, IB2= -0.2A  
RL=125Ω  
Fall Time  
* Pulse Test: Pulse Width300μs, Duty Cycle2%  
Note.  
Package Mark information.  
R
9 ~ 16  
S
YWW  
Z
SemiHow Symbol  
S
hFE1  
O
Y
14 ~ 21  
19 ~ 26  
25 ~ 35  
YWW  
Z
Y; year code, WW; week code  
hFE1 Classification  
Classification  
KSH13003A  
G
◎ SEMIHOW REV.A1,Jan 2008  

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