Datasheet > KSD568OTU

KSD568OTU

更新时间： 2025-08-27 19:02:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	42K
描述
元器件封装:TO-220-3;

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中文翻译

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数据手册

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KSD568OTU 数据手册

KSD568/569

Low Frequency Power Amplifier

•

Low Speed Switching Industrial Use

Complement to KSB707/708

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

100

CBO

CEO

: KSD568

: KSD569

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

EBO

3.5

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.5

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

Test Condition

Min.

Max.

Units

µA

= 80V, I = 0

CBO

EBO

= 5V, I = 0

µA

= 1V, I = 3A

200

FE1

FE2

= 1V, I = 5A

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

= 5A, I = 0.5A

0.5

1.5

= 5A, I = 0.5A

* Pulse Test: PW≤350µs, Duty Cycle≤2%

Classification

40 ~ 80

60 ~ 120

100 ~ 200

FE1

Rev. A, February 2000

12 3 4

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