KSD1691YSTU

更新时间： 2024-02-01 20:24:54

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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KSD1691YSTU 数据手册

KSD1691

Feature

•

Low Collector-Emtter Saturation Voltage & Large Collector Current

High Power Dissipation: P = 1.3W (T =25°C)

Complementary to KSB1151

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

CBO

CEO

EBO

1.3

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤10ms, duty Cycle≤50%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

Test Condition

Min.

Typ.

Max.

Units

= 50V, I = 0

µA

CBO

= 7V, I = 0

EBO

= 1V, I = 0.1A

100

FE1

= 1V, I = 2A

400

FE2

FE3

= 1V, I = 5A

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

Turn ON Time

= 2A, I = 0.2A

0.1

0.9

0.2

1.1

0.2

0.3

1.2

= 2A, I = 0.2A

= 10V, I = 2A

µs

= - I = 0.2A

Storage Time

2.5

STG

R = 5Ω

Fall Time

* Pulse test: PW≤50µs, duty Cycle≤2% Pulsed

Classificntion

Classification

100 ~ 200

160 ~ 320

200 ~ 400

FE 2

Rev. A, February 2000

12 3 4 5

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