KSD1692G

更新时间： 2024-02-20 18:26:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	53K
描述
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

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技术参数
数据手册

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KSD1692G 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.7
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	100 V
配置：	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	最小直流电流增益 (hFE)：	4000
JEDEC-95代码：	TO-126	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

KSD1692G 数据手册

KSD1692

Feature

•

High Dc Durrent Gain

Low Collector Saturation Voltage

Built-in a Damper Diode at E-C

High Power Dissipation : P = 1.3W (Ta=25°C)

TO-126

1. Emitter 2.Collector 3.Base

NPN Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Sym-

bol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

150

CBO

CEO

EBO

100

Collector Current (DC)

*Collector Current (Pulse)

1.3

Collector Dissipation (T =25°C)

°C

Junction Temperature

150

Storage Temperature

- 55 ~ 150

STG

* PW≤10ms, duty Cycle≤50%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

Test Condition

Min.

Typ.

Max.

Units

µA

= 100V, I = 0

CBO

EBO

= 5V, I = 0

= 2V, I = 1.5A

20K

FE1

= 2V, I = 3A

FE2

(sat)

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

Turn ON Time

= 1.5A, I = 1.5mA

0.9

1.5

0.5

1.2

= 1.5A, I = 1.5mA

= 40V, I = 1.5A

µs

= - I = 1.5mA

Storage Time

STG

R = 27Ω

Fall Time

* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed

Classificntion

Classification

2000 ~ 5000

4000 ~ 12000

6000 ~ 20000

FE1

Rev. A, February 2000

12 3 4

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