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KSD1020G PDF预览

KSD1020G

更新时间: 2024-11-24 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体音频放大器小信号双极晶体管
页数 文件大小 规格书
4页 41K
描述
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KSD1020G 数据手册

 浏览型号KSD1020G的Datasheet PDF文件第2页浏览型号KSD1020G的Datasheet PDF文件第3页浏览型号KSD1020G的Datasheet PDF文件第4页 
KSD1020  
Audio Frequency Amplifier  
Complement to KSB810  
TO-92S  
1.Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
CBO  
25  
V
CEO  
EBO  
5.0  
V
I
I
Collector Current (DC)  
* Collector Current (Pulse)  
700  
mA  
A
C
1.0  
CP  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
350  
mW  
°C  
°C  
C
T
150  
J
T
-55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
100  
100  
400  
Units  
I
I
V
V
=30V, I =0  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
=5V, I =0  
C
h
h
V
V
=1V, I =100mA  
120  
35  
200  
140  
FE1  
FE2  
CE  
CE  
C
=1V, I =700mA  
C
V
V
V
(on)  
(sat)  
(sat)  
Base-Emitter On Voltage  
V
=6V, I =10mA  
600  
640  
0.2  
700  
0.4  
1.2  
25  
mV  
V
BE  
CE  
BE  
CE  
C
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I =700mA, I =70mA  
C B  
I =700mA, I =70mA  
0.95  
13  
V
C
B
C
V
=6V, I =0, f=1MHz  
pF  
MHz  
ob  
CB  
CE  
E
f
Current Gain Bandwidth Product  
V
=6V, I =10mA  
50  
170  
T
C
* Pulse Test: PW350µs, Duty Cycle2%  
h
Classification  
FE1  
Classification  
Y
G
h
120 ~ 240  
200 ~ 400  
FE1  
©2004 Fairchild Semiconductor Corporation  
Rev. B2, April 2004  

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