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KSC900 PDF预览

KSC900

更新时间: 2024-01-31 16:38:50
品牌 Logo 应用领域
三星 - SAMSUNG 晶体放大器小信号双极晶体管
页数 文件大小 规格书
3页 117K
描述
NPN (LOW FREQUENCY, LOW NOISE AMPLIFIER)

KSC900 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.7最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
功耗环境最大值:0.25 W最大功率耗散 (Abs):0.25 W
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.2 VBase Number Matches:1

KSC900 数据手册

 浏览型号KSC900的Datasheet PDF文件第2页浏览型号KSC900的Datasheet PDF文件第3页 

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KSC900LBU ROCHESTER

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50mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
KSC900LD27Z FAIRCHILD

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Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92