KSC5019MBU

更新时间： 2024-01-17 14:25:28

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号双极晶体管
页数	文件大小	规格书
4页	40K
描述
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

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技术参数
数据手册

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KSC5019MBU 技术参数

生命周期：	Obsolete	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.79
最大集电极电流 (IC)：	2 A	集电极-发射极最大电压：	10 V
配置：	SINGLE	最小直流电流增益 (hFE)：	420
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

KSC5019MBU 数据手册

KSC5019

Low Saturation

•

(sat)=0.5V at I =2A, I =50mA

CE C B

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

* Collector Current (Pulse)

Base Current

CBO

CES

CEO

EBO

Collector Power Dissipation

Junction Temperature

Storage Temperature

750

°C

150

-55 ~ 150

STG

* PW≤10ms, Duty Cycle≤30%

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

100

Units

=30V, I =0

CBO

EBO

=6V, I =0

100

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

I =10mA, I =0

CEO

EBO

I =1mA, I =0

=1V, I =0.5A

140

600

FE1

FE2

=1V, I =2A

200

0.2

(sat)

(on)

Collector-Emitter Saturation Voltage

Base Emitter On Voltage

I =2A, I =50mA

0.5

1.5

=1V, I =2A

0.86

150

Current Gain Bandwidth Product

Output Capacitance

=1V, I =0.5A

MHz

=10V, I =0, f=1MHz

Classification

140 ~ 240

200 ~ 330

300 ~ 450

420 ~ 600

Rev. A2, September 2002

12 3 4

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