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KSC2759OD87Z PDF预览

KSC2759OD87Z

更新时间: 2024-11-21 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
5页 107K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

KSC2759OD87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.3 pF
集电极-发射极最大电压:14 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):2000 MHzBase Number Matches:1

KSC2759OD87Z 数据手册

 浏览型号KSC2759OD87Z的Datasheet PDF文件第2页浏览型号KSC2759OD87Z的Datasheet PDF文件第3页浏览型号KSC2759OD87Z的Datasheet PDF文件第4页浏览型号KSC2759OD87Z的Datasheet PDF文件第5页 
KSC2759  
NPN EPITAXIAL SILICON TRANSISTOR  
MIXER, OSCILLATOR FOR UHF TUNER  
SOT-23  
ABSOLUTE MAXIMUM RATINGS (TA =25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
30  
14  
3
V
V
V
mA  
mW  
°C  
°C  
VCEO  
VEBO  
IC  
PC  
TJ  
50  
150  
150  
-55~150  
TSTG  
1. Base 2. Emitter 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
mA  
Collector Cutoff Current  
DC Current Gain  
Current Gain Bandwidth Product  
Output Capacitance  
ICBO  
hFE  
fT  
COB  
GCB  
VCB =15V, IE =0  
0.1  
180  
VCE =10V, IC =5mA  
VCE =10V, IC =5mA  
VCB =10V, IE =0. f=1MHz  
VCB =10V, IE =5mA  
fRF =900MHz, fOSC =935MHz  
115dB  
40  
1.5  
100  
2
1
GHz  
pF  
dB  
1.3  
Conversion Gain  
12.5  
10  
hFE CLASSIFICATION  
Classification  
R
O
Y
hFE  
40-80  
60-120  
90-180  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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