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KSC2715RS62Z PDF预览

KSC2715RS62Z

更新时间: 2024-11-24 21:02:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
4页 41K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

KSC2715RS62Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.78
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

KSC2715RS62Z 数据手册

 浏览型号KSC2715RS62Z的Datasheet PDF文件第2页浏览型号KSC2715RS62Z的Datasheet PDF文件第3页浏览型号KSC2715RS62Z的Datasheet PDF文件第4页 
KSC2715  
FM RADIO AMP, MIX, CONV, OSC, IF AMP  
High Power Gain : G =30dB  
PE  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
35  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
30  
V
CEO  
EBO  
4
V
I
50  
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
150  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
0.1  
1
Units  
I
I
V
V
V
=35V, I =0  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
=4V, I =0  
C
h
=12V, I =2mA  
40  
240  
0.4  
1.0  
400  
3.2  
33  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter on Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
V
V
CE  
BE  
C
B
I =10mA, I =1mA  
C
B
f
V
=10V, I =1mA  
100  
27  
MHz  
pF  
dB  
T
CE  
CB  
C
C
V
=10V, I =0, f=1MHz  
2
ob  
E
G
Power Gain  
V
=6V, I =1mA  
30  
PE  
CE  
C
f=10.7MHz  
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
Marking  
B1O  
h
grade  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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