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KSC1815LJ18Z PDF预览

KSC1815LJ18Z

更新时间: 2024-11-09 21:16:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 1177K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

KSC1815LJ18Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.7
Is Samacsys:N最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):350JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

KSC1815LJ18Z 数据手册

 浏览型号KSC1815LJ18Z的Datasheet PDF文件第2页浏览型号KSC1815LJ18Z的Datasheet PDF文件第3页 
KSC1815  
NPN EPITAXIAL SILICON TRANSISTOR  
AUDIO FREQUENCY AMPLIFIER  
HIGH FREQUENCY OSC  
TO-92  
· Complement to KSC1815  
· Collector-Base Voltage VCBO= -50V  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
60  
50  
5
150  
50  
400  
125  
-55 ~ 150  
V
V
V
mA  
mA  
mW  
°C  
°C  
VCEO  
VEBO  
IC  
IB  
PC  
Base Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
TSTG  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
mA  
mA  
ICBO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
VCB=60V, IE=0  
VEB=5V, IC=0  
0.1  
0.1  
700  
hFE  
1
VCE=6V, IC=2mA  
VCE=6V, IC=150mA  
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
VCE=10V, IC=1mA  
VCB=10V, IE=0,f=1MHz  
VCE=6V, IC=0.1mA  
RG=10KW,f=1Hz  
70  
25  
hFE  
2
VCE (sat)  
VBE (sat)  
fT  
COB  
NF  
V
V
MHz  
pF  
dB  
0.25  
1.0  
Collector-Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Current Gain-Bandwidth Product  
Output Capacitance  
0.1  
80  
3.0  
1.0  
2.0  
1.0  
Noise Figure  
hFE1 CLASSIFICATION  
Classification  
O
Y
G
L
hFE1  
70~140  
120~240  
200~400  
350~700  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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