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KSC1623GMTF_NL PDF预览

KSC1623GMTF_NL

更新时间: 2024-11-14 20:04:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
4页 58K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-23, 3 PIN

KSC1623GMTF_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.51最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

KSC1623GMTF_NL 数据手册

 浏览型号KSC1623GMTF_NL的Datasheet PDF文件第2页浏览型号KSC1623GMTF_NL的Datasheet PDF文件第3页浏览型号KSC1623GMTF_NL的Datasheet PDF文件第4页 
KSC1623  
Low Frequency Amplifier & High Frequency  
OSC.  
3
Complement to KSA812  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
5
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
90  
Typ.  
Max.  
0.1  
Units  
I
I
V
V
V
=60V, I =0  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
=5V, I =0  
0.1  
C
h
DC Current Gain  
=6V, I =1mA  
200  
0.15  
0.86  
0.62  
250  
3
600  
0.3  
FE  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =100mA, I =10mA  
V
V
CE  
BE  
BE  
C
B
I =100mA, I =10mA  
1.0  
C
B
V
=6V, I =1mA  
0.55  
0.65  
V
CE  
CE  
CB  
C
f
V
V
=6V, I =10mA  
MHz  
pF  
T
C
C
=6V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
O
Y
G
L
h
90 ~ 180  
135 ~ 270  
200 ~ 400  
300 ~ 600  
FE  
Marking  
C1O  
h
grade  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

KSC1623GMTF_NL 替代型号

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