5秒后页面跳转
KSC1507OJ69Z PDF预览

KSC1507OJ69Z

更新时间: 2024-11-14 14:51:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
4页 39K
描述
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC1507OJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):70JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

KSC1507OJ69Z 数据手册

 浏览型号KSC1507OJ69Z的Datasheet PDF文件第2页浏览型号KSC1507OJ69Z的Datasheet PDF文件第3页浏览型号KSC1507OJ69Z的Datasheet PDF文件第4页 
KSC1507  
Color TV Chroma Output  
High Collector-Emitter Voltage : V  
=300V  
CEO  
Current Gain Bandwidth Product : f =40MHz (Min.)  
T
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
300  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
300  
7
V
I
0.2  
A
C
P
Collector Dissipation (T =25°C)  
15  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
I
= 100µA, I = 0  
300  
300  
7
CBO  
CEO  
EBO  
C
C
E
E
BV  
BV  
= 10mA, I = 0  
V
B
= - 10µA, I = 0  
V
C
I
V
V
= 200V, I = 0  
100  
400  
2.0  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
= 10V, I = 10mA  
40  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
= 50mA, I = 5mA  
V
CE  
C
B
f
V
V
= 30V, I = 10mA  
80  
4
MHz  
pF  
T
CE  
C
C
= 50V, I = 0,  
E
ob  
CB  
f = 1MHz  
h
Classification  
FE  
Classification  
R
O
Y
G
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, May 2001  

与KSC1507OJ69Z相关器件

型号 品牌 获取价格 描述 数据表
KSC1507OTU FAIRCHILD

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC1507R FAIRCHILD

获取价格

暂无描述
KSC1507RJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC1507Y FAIRCHILD

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC1507-Y SAMSUNG

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC1507YJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC1507YTSTU ROCHESTER

获取价格

0.2A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
KSC1507YTU FAIRCHILD

获取价格

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC151G50LFG CK-COMPONENTS

获取价格

Sealed Tact Switch for SMT
KSC151G50LFS CK-COMPONENTS

获取价格

Sealed Tact Switch for SMT