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KSA542R PDF预览

KSA542R

更新时间: 2024-10-02 15:36:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 36K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA542R 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

KSA542R 数据手册

 浏览型号KSA542R的Datasheet PDF文件第2页浏览型号KSA542R的Datasheet PDF文件第3页浏览型号KSA542R的Datasheet PDF文件第4页 
KSA542  
LOW FREQUENCY AMPLIFIER  
Collector-Base Voltage : V  
Low Collector-Emitter Saturation Voltage : V (sat)= -0.15V(TYP.)  
Complement to KSC184  
= -30V  
CBO  
CE  
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-25  
V
CEO  
EBO  
-5  
V
I
-50  
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
250  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-30  
-25  
- 5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA. I =0  
C
B
I
= -10µA. I =0  
V
E
C
I
I
V
V
V
= -25V, I =0  
-100  
-100  
400  
-0.3  
-1.0  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
= -3V, I =0  
C
h
DC Current Gain  
= -6V, I = -1mA  
40  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -20mA, I = -2mA  
-0.15  
-0.65  
100  
V
V
CE  
C
B
V
= -6V, I = -1mA  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
= -6V, I = -1mA  
MHz  
pF  
T
C
C
= -6V, I = 0, f=1MHz  
2.5  
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
120 ~ 240  
G
h
40 ~ 80  
70 ~ 140  
200 ~ 400  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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