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KSA614O PDF预览

KSA614O

更新时间: 2024-10-02 13:09:11
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 117K
描述
Transistor

KSA614O 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

KSA614O 数据手册

 浏览型号KSA614O的Datasheet PDF文件第2页浏览型号KSA614O的Datasheet PDF文件第3页浏览型号KSA614O的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
KSA614  
DESCRIPTION  
·With TO-220 package  
·Collector-Base Voltage:VCBO=-80V(Min)  
·Collector dissipation:PC=25W@TC=25  
APPLICATIONS  
·Low frequency power amplifier  
·Power regulator  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
-80  
UNIT  
V
Open base  
-55  
V
Open collector  
-5  
V
Collector current (DC)  
Collector power dissipation  
Junction temperature  
Storage temperature  
-3  
A
PC  
TC=25℃  
25  
W
Tj  
150  
-55~150  
Tstg  

与KSA614O相关器件

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KSA614-O SAMSUNG

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Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
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暂无描述
KSA614-R SAMSUNG

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Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
KSA614Y FAIRCHILD

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Low Frequency Power Amplifier
KSA614Y ONSEMI

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PNP外延硅晶体管
KSA614-Y SAMSUNG

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Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
KSA614YTSTU FAIRCHILD

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Low Frequency Power Amplifier
KSA614YTU FAIRCHILD

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PNP Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
KSA614YTU ONSEMI

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PNP外延硅晶体管