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KSA1015OJ05Z PDF预览

KSA1015OJ05Z

更新时间: 2024-01-09 09:35:34
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 39K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

KSA1015OJ05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.7
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

KSA1015OJ05Z 数据手册

 浏览型号KSA1015OJ05Z的Datasheet PDF文件第2页浏览型号KSA1015OJ05Z的Datasheet PDF文件第3页浏览型号KSA1015OJ05Z的Datasheet PDF文件第4页 
KSA1015  
LOW FREQUENCY AMPLIFIER  
Collector-Base Voltage : V  
Complement to KSC1815  
= -50V  
CBO  
TO-92  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-50  
V
CEO  
EBO  
-5  
V
I
I
-150  
-50  
mA  
mA  
mW  
°C  
C
Base Current  
B
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
400  
C
T
T
125  
J
-65 ~ 150  
°C  
ST9  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-50  
-50  
-5  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA, I =0  
C B  
I = -10µA, I =0  
V
E
C
I
I
V
= -50V, I =0  
-0.1  
-0.1  
400  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
V
= -5V, I =0  
C
h
h
DC Current Gain  
V
V
= -6V, I = -2mA  
70  
25  
FE1  
FE2  
CE  
CE  
C
= -6V, I = -150mA  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -100mA, I = -10mA  
-0.1  
-0.3  
-1.1  
V
V
CE  
C
B
I = -100mA, I = -10mA  
BE  
C
B
f
V
= -10V, I =-1mA  
80  
MHz  
pF  
dB  
T
CE  
CB  
CE  
C
C
V
= -10V, I =0, f=1MHz  
4
7
6
ob  
E
NF  
Noise Figure  
V
= -6V, I = -0.1mA  
0.5  
C
f=100Hz, R =10kΩ  
G
h
Classification  
FE1  
Classification  
O
Y
G
h
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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