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KSA1013RTA PDF预览

KSA1013RTA

更新时间: 2024-11-16 21:20:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 52K
描述
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN

KSA1013RTA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92L包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.73最大集电极电流 (IC):1 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

KSA1013RTA 数据手册

 浏览型号KSA1013RTA的Datasheet PDF文件第2页浏览型号KSA1013RTA的Datasheet PDF文件第3页浏览型号KSA1013RTA的Datasheet PDF文件第4页浏览型号KSA1013RTA的Datasheet PDF文件第5页 
KSA1013  
Color TV Audio Output  
Color TV Vertical Deflection Output  
TO-92L  
1. Emitter 2. Collector 3. Base  
1
PNP EPITAXIAL SILICON TRANSISTOR  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-160  
-160  
-6  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
V
I
I
-1  
A
C
Base Current  
-0.5  
A
B
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
900  
mW  
°C  
°C  
C
T
T
150  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
-1  
Units  
I
I
V
V
= -150V, I =0  
µA  
µA  
V
CBO  
EBO  
CB  
EB  
E
= -6mA, I =0  
-1  
C
BV  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
I = -10mA, I =0  
-160  
60  
CEO  
C
B
h
V
= -5V, I = -200mA  
320  
-1.5  
FE  
CE  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -500mA, I = -50mA  
V
V
CE  
C
B
(on)  
V
= -5V, I = -5mA  
-0.45  
15  
-0.75  
BE  
CE  
CE  
CB  
C
f
V
V
= -5V, I = -200mA  
50  
MHz  
pF  
T
C
C
= -10V, I =0, f=1MHz  
35  
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
60 ~ 120  
100 ~ 200  
160 ~ 320  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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