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KRT-13221 PDF预览

KRT-13221

更新时间: 2024-10-30 05:41:03
品牌 Logo 应用领域
可天士 - KODENSHI 光电二极管
页数 文件大小 规格书
2页 178K
描述
1.25Gbps InGaAs PIN PD for TO 46 PKG

KRT-13221 数据手册

 浏览型号KRT-13221的Datasheet PDF文件第2页 
1.25Gbps InGaAs PIN PD for TO 46 PKG  
KRT-13221x  
Description  
KRT-13221x are InGaAs PIN photo diodes with various diameter options of active area.  
KRT-13221x are packaged in industry standard TO-46 stem with long ball lens cap.  
They are recommended for digital optical communications.  
Features  
Front illuminated planar PIN-PD  
Low capacitance and low dark current  
Hermetically sealed TO-46 package with lond ball lens cap.  
High reliability and environmental endurance  
Wide operating wavelength range from 1.1mm to 1.6mm  
Wide operating temperature range from –40oC to 85oC  
Applications  
High speed Data Communications  
Gigabit Ethernet  
Fiber Channel  
Optical power monitoring  
Absolute Maximum Ratings  
Parameter  
Operating Temperature  
Storage Temperature  
Reverse Voltage  
Symbol  
Topr  
Ratings  
Unit  
-40 ~ +85  
Tstg.  
VRD  
Po  
-40 ~ +100  
20  
10  
V
Input Optical power  
Forward Current  
mW  
mA  
IFD  
10  
Tsol.  
Soldering Temperature *1  
260  
*1 : Soldering Time 5 seconds (At a distance of 1 mm from the package).  
Electro-Optical Characteristics  
Parameter  
Active Area  
Symbol Min. Typ. Max.  
Unit  
um  
Test Condition  
Ø
75  
1100  
1600  
nm  
Detection Range  
ID  
S
0.10  
0.5  
nA  
@ VR=5V, 25℃  
@ VR=5V, 25℃  
Dark Current  
1.31um  
1.55um  
0.80  
0.85  
2
Responsivity  
mA/mW  
BW  
Cp  
-
GHz  
pF  
@VR=5, RL=50Ω  
@ VR=5V, f=1MHz  
Bandwidth  
Capacitance  
0.7  
1.2  
* These specifications are subject to change without notice.  
1/2  
Rev.001  
For more information on other parts available, please visit our website: www.kodenshi.co.kr  
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea  

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