FRH10A045 thru FRH10A20
Pb
FRH10A045/FRH10A06/FRH10A10/FRH10A15/FRH10A20
Pb Free Plating Product
10.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers
ITO-220AB
Unit : inch (mm)
Features
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
ꢀ Fast switching for high efficiency
ꢀ Low forward voltage drop
ꢀ High current capability
ꢀ Low reverse leakage current
ꢀ High surge current capability
Application
.130(3.3)
.114(2.9)
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
.1
ꢀ Case: Fully Isolated TO-220FP FullPak Plastic
ꢀ Epoxy: UL 94V-0 rate flame retardant
ꢀ Terminals: Solderable per MIL-STD-202
method 208
ꢀ Polarity: As marked on diode body
ꢀ Mounting position: Any
(2.55)
(2.55)
Case
Case
Case
Doubler
Case
Series
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "KSH"
Prefix "KCH"
Suffix "KRH"
Suffix "KDH"
ꢀ Weight: 2.0 gram approxiamtely
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
KRH
10A045 10A06
KRH
KRH
10A10
KRH
10A15
KRH
10A20
PARAMETER
SYMBOL
UNIT
Marking code
KRH10A045 KRH10A06 KRH10A10 KRH10A15 KRH10A20
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
45
31
45
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
10
Maximum average forward rectified current
IF(AV)
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
10
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
120
A
A
Peak repetitive reverse surge current (Note 1)
0.5
1
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25℃
0.88
0.78
0.98
0.88
0.70
0.57
0.80
0.67
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.1
IF= 5 A, TJ=125℃
VF
V
IF= 10 A, TJ=25℃
IF= 10 A, TJ=125℃
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
5
15
10
2
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
1.5
dV/dt
RθJC
TJ
V/μs
℃ / W
℃
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
℃
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Page 1/2
http://www.thinkisemi.com/
Rev.07
© 2006 Thinki Semiconductor Co., Ltd.