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KRC663U

更新时间: 2024-11-08 22:47:31
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
4页 53K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC663U 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KRC663U 数据手册

 浏览型号KRC663U的Datasheet PDF文件第2页浏览型号KRC663U的Datasheet PDF文件第3页浏览型号KRC663U的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KRC660U~KRC664U  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
FEATURES  
B1  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
5
4
DIM MILLIMETERS  
_
2.00+0.20  
A
A1  
B
_
1.3+0.1  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
_
2.1+0.1  
D
_
1.25+0.1  
B1  
C
0.65  
0.2+0.10/-0.05  
0-0.1  
D
G
EQUIVALENT CIRCUIT  
EQUIVALENT CIRCUIT (TOP VIEW)  
_
0.9+0.1  
H
T
0.15+0.1/-0.05  
T
5
4
C
G
R1  
Q1  
Q2  
B
1. Q IN (BASE)  
1
2. Q , Q COMMON (EMITTER)  
2
1
3. Q IN (BASE)  
2
4. Q OUT (COLLECTOR)  
2
5. Q OUT (COLLECTOR)  
1
E
1
2
3
USV  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL RATING  
UNIT  
CHARACTERISTIC  
Collector Power Dissipation  
Junction Temperature  
SYMBOL RATING  
UNIT  
mW  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
50  
5
V
V
PC *  
Tj  
200  
150  
V
Tstg  
Storage Temperature Range  
* Total Rating.  
-55 150  
100  
mA  
ELECTRICAL CHARACTERISTICS (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
100  
100  
-
UNIT  
nA  
VCB=50V, IE=0  
Collector Cut-off Current  
-
-
-
IEBO  
VEB=5V, IC=0  
Emitter Cut-off Current  
-
120  
-
nA  
hFE  
VCE=5V, IC=1mA  
IC=10mA, IB=0.5mA  
VCE=10V, IC=5mA  
DC Current Gain  
-
VCE(sat)  
fT *  
Collector-Emitter Saturation Voltage  
Transition Frequency  
0.1  
250  
0.3  
-
V
-
MHz  
KRC660U  
KRC661U  
-
-
-
-
-
4.7  
10  
-
-
-
-
-
KRC662U  
KRC663U  
KRC664U  
R1  
100  
22  
Input Resistor  
k
47  
Note : * Characteristic of Transistor Only.  
Marking  
Type Name  
5
4
MARK SPEC  
TYPE  
KRC660U  
NK  
KRC661U  
NM  
KRC662U  
NN  
KRC663U  
NO  
KRC664U  
NP  
MARK  
1
2
3
2002. 7. 10  
Revision No : 4  
1/4  

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