5秒后页面跳转
KRA755E PDF预览

KRA755E

更新时间: 2024-11-28 22:47:35
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
6页 115K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA755E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21.36
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

KRA755E 数据手册

 浏览型号KRA755E的Datasheet PDF文件第2页浏览型号KRA755E的Datasheet PDF文件第3页浏览型号KRA755E的Datasheet PDF文件第4页浏览型号KRA755E的Datasheet PDF文件第5页浏览型号KRA755E的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KRA751E~KRA756E  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
_
1.6+0.05  
_
B1  
C
D
H
J
1.2+0.05  
0.50  
4
_
0.2+0.05  
_
0.5+0.05  
_
0.12+0.05  
P
P
P
5
EQUIVALENT CIRCUIT  
OUT  
BIAS RESISTOR VALUES  
TYPE NO.  
KRA751E  
KRA752E  
KRA753E  
KRA754E  
KRA755E  
KRA756E  
R1(k) R2(k)  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
IN  
1. Q COMMON (EMITTER)  
1
2. Q IN (BASE)  
1
3. Q OUT (COLLECTOR)  
2
R2  
22  
4. Q COMMON (EMITTER)  
2
5. Q IN (BASE)  
2
6. Q OUT (COLLECTOR)  
47  
1
COMMON(+)  
2.2  
4.7  
TES6  
EQUIVALENT CIRCUIT (TOP VIEW)  
6
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
V
Output Voltage  
KRA751E756E  
KRA751E  
-20, 10  
-30, 10  
-40, 10  
-40, 10  
-12, 5  
-20, 5  
-100  
KRA752E  
KRA753E  
VI  
Input Voltage  
V
KRA754E  
KRA755E  
KRA756E  
IO  
PD *  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
Junction Temperature  
Storage Temperature Range  
* Total Rating.  
200  
KRA751E756E  
150  
Tstg  
-55150  
Marking  
Type Name  
6
5
4
3
MARK SPEC  
TYPE  
KRA751E KRA752E KRA753E KRA754E KRA755E KRA756E  
MARK  
PA PB PC PD PE PF  
1
2
2002. 1. 24  
Revision No : 1  
1/6  

与KRA755E相关器件

型号 品牌 获取价格 描述 数据表
KRA755U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA756E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA756U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA757E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA757U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA758E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA758U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA759E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA759U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA760E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)