5秒后页面跳转
KRA770E PDF预览

KRA770E

更新时间: 2024-11-29 22:47:35
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
6页 72K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA770E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.47最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):24JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KRA770E 数据手册

 浏览型号KRA770E的Datasheet PDF文件第2页浏览型号KRA770E的Datasheet PDF文件第3页浏览型号KRA770E的Datasheet PDF文件第4页浏览型号KRA770E的Datasheet PDF文件第5页浏览型号KRA770E的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KRA766E~KRA772E  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
_
1.6+0.05  
_
1.2+0.05  
B1  
C
0.50  
_
0.2+0.05  
4
D
H
J
_
0.5+0.05  
_
0.12+0.05  
P
P
BIAS RESISTOR VALUES  
EQUIVALENT CIRCUIT  
P
5
TYPE NO.  
KRA766E  
KRA767E  
KRA768E  
KRA769E  
KRA770E  
KRA771E  
KRA772E  
R1(k  
1
)
R2(k  
10  
)
OUT  
R1  
IN  
2.2  
2.2  
4.7  
10  
2.2  
10  
1. Q COMMON (EMITTER)  
1
2. Q IN (BASE)  
1
3. Q OUT (COLLECTOR)  
2
R2  
4. Q COMMON (EMITTER)  
2
5. Q IN (BASE)  
2
6. Q OUT (COLLECTOR)  
1
10  
4.7  
10  
COMMON(+)  
47  
TES6  
100  
100  
EQUIVALENT CIRCUIT (TOP VIEW)  
6
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
V
Output Voltage  
KRA766E 772E  
KRA766E  
KRA767E  
KRA768E  
KRA769E  
KRA770E  
KRA771E  
KRA772E  
-10, 5  
-12, 10  
-12, 5  
-20, 7  
-30, 10  
-40, 15  
-40, 10  
-100  
VI  
Input Voltage  
V
IO  
PD *  
Tj  
Output Current  
mA  
Power Dissipation  
Junction Temperature  
200  
mW  
KRA766E 772E  
150  
Tstg  
Storage Temperature Range  
* : Total Rating.  
-55 150  
Marking  
Type Name  
6
5
4
MARK SPEC  
TYPE  
KRA766E KRA767E KRA768E KRA769E KRA770E KRA771E KRA772E  
P2 P4 P5 P6 P7 P8 P9  
MARK  
1
2
3
2002. 7. 9  
Revision No : 2  
1/6  

与KRA770E相关器件

型号 品牌 获取价格 描述 数据表
KRA770U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA771E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA771U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA772E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA772U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRB011 KINGBRIGHT

获取价格

2mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT, ROHS COMPLIANT PACKAGE
KRB0305D-3W MORNSUN

获取价格

Analog Circuit
KRB0305S-1W MORNSUN

获取价格

SINGLE OUTPUT DC-DC CONVERTER
KRB0309S-1W MORNSUN

获取价格

SINGLE OUTPUT DC-DC CONVERTER
KRB031 KINGBRIGHT

获取价格

PCB TYPE PHOTOINTERRUPTER