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KM68V1002BLT-120 PDF预览

KM68V1002BLT-120

更新时间: 2024-11-11 15:36:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 184K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

KM68V1002BLT-120 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:12 nsJESD-30 代码:R-PDSO-G32
长度:20.95 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

KM68V1002BLT-120 数据手册

 浏览型号KM68V1002BLT-120的Datasheet PDF文件第2页浏览型号KM68V1002BLT-120的Datasheet PDF文件第3页浏览型号KM68V1002BLT-120的Datasheet PDF文件第4页浏览型号KM68V1002BLT-120的Datasheet PDF文件第5页浏览型号KM68V1002BLT-120的Datasheet PDF文件第6页浏览型号KM68V1002BLT-120的Datasheet PDF文件第7页 
Preliminary  
PRELIMINARY  
CMOS SRAM  
KM68V1002B/BL, KM68V1002BI/BLI  
Document Title  
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev.1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Apr. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev.2.0  
Release to Final Data Sheet.  
Feb. 25th, 1998  
Final  
2.1. Delete Preliminary.  
2.2. Delete 32-SOJ-300 package.  
2.3. Add Capacitive load of the test environment in A.C test load.  
2.4. Change D.C characteristics.  
Previous spec.  
(8/10/12ns part)  
160/150/140mA  
30mA  
Changed spec.  
Items  
(8/10/12ns part)  
160/155/150mA  
50mA  
ICC  
ISB  
Rev. 2.1  
Aug. 4th, 1998  
Final  
Change Standby and Data Retention Current for L-ver.  
Items  
ISB1  
Previous spec.  
Changed spec.  
0.7mA  
0.5mA  
IDR at 3.0V  
IDR at 2.0V  
0.4mA  
0.3mA  
0.5mA  
0.4mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
August 1998  
- 1 -  

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Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
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Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
KM68V1002BTI-100 SAMSUNG

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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
KM68V1002BTI-12 SAMSUNG

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
KM68V1002BTI-120 SAMSUNG

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32