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KM68U4000BLG-8L0 PDF预览

KM68U4000BLG-8L0

更新时间: 2024-11-13 18:52:19
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 151K
描述
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

KM68U4000BLG-8L0 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.77
最长访问时间:85 nsJESD-30 代码:R-PDSO-G32
长度:20.47 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL座面最大高度:3 mm
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:11.43 mm
Base Number Matches:1

KM68U4000BLG-8L0 数据手册

 浏览型号KM68U4000BLG-8L0的Datasheet PDF文件第2页浏览型号KM68U4000BLG-8L0的Datasheet PDF文件第3页浏览型号KM68U4000BLG-8L0的Datasheet PDF文件第4页浏览型号KM68U4000BLG-8L0的Datasheet PDF文件第5页浏览型号KM68U4000BLG-8L0的Datasheet PDF文件第6页浏览型号KM68U4000BLG-8L0的Datasheet PDF文件第7页 
KM68V4000B, KM68U4000B Family  
CMOS SRAM  
Document Title  
512Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
Initial draft  
December 17, 1996  
Preliminary  
1.0  
Finalize  
Januarary 14, 1998  
Final  
- Change datasheet format  
- Erase low power part from product  
- Erase 70ns part from KM68U4000B family  
- Power dissipation Improved 0.7 to 1.0W  
- VIL(MAX) improved 0.4 to 0.6V.  
- ICC2 decreased 50 to 45mA.  
2.0  
Revised  
February 12, 1998  
Final  
- ICC1 decreased 20 to 25mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
1
February 1998  

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