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KM68U1000C PDF预览

KM68U1000C

更新时间: 2024-09-25 11:30:47
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
11页 146K
描述
128K x8 bit Low Power and Low Voltage CMOS Static RAM

KM68U1000C 数据手册

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K6T1008V2C, K6T1008U2C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
1.0  
Initial draft  
July 3, 1996  
Preliminary  
Finalize  
December 16, 1996  
Final  
- Increased ISB, IDR  
Commercial part = 10mA  
Industrial part = 20mA  
2.0  
Revise  
November 25, 1997  
Final  
- Change speed bin  
KM68V1000C Family: 70/85ns ® 70/100ns  
KM68U1000C Family: 70/100ns ® 85/100ns  
- Improved operating current: 40mA ® 35mA  
- Improved power dissipation  
PD: 0.7W ® 1.0W  
- Improved standby current  
Extended/Industrial: 20 ® 10mA  
- VIL: 0.4V ® 0.6V  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
November 1997  
1

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Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
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Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
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Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
KM68U1000CLRE-7L SAMSUNG

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Standard SRAM, 128KX8, 70ns, CMOS, PDSO32
KM68U1000CLRG-10L SAMSUNG

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Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, TSOP1-32