Datasheet > KM684002CTE-1000

KM684002CTE-1000

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	183K
描述
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

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数据手册

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KM684002CTE-1000 数据手册

PRELIMINARY

CMOS SRAM

KM684002C, KM684002CE, KM684002CI

Document Title

512Kx8 Bit High Speed Static RAM(5V Operating).

Operated at Extended and Industrial Temperature Ranges.

Revision History

RevNo.

Rev. 0.0

Rev. 1.0

History

Draft Data

Remark

Initial release with Preliminary.

Feb. 12. 1999

Mar. 29. 1999

Preliminary

1.1 Removed Low power Version.

1.2 Removed Data Retention Characteristics.

1.3 Changed ISB1 to 20mA

Rev. 2.0

2.1 Relax D.C parameters.

Aug. 19. 1999

Preliminary

Item

Current

195mA

190mA

185mA

12ns

15ns

20ns

170mA

165mA

160mA

ICC

2.2 Relax Absolute Maximum Rating.

Item

Current

Voltage on Any Pin Relative to Vss

-0.5 to 7.0

-0.5 to Vcc+0.5

3.1 Delete Preliminary

Rev. 3.0

Mar. 27. 2000

Final

3.2 Update D.C parameters and 10ns part.

Current

ICC

195mA

190mA

185mA

Isb

Isb1

ICC

Isb

Isb1

10ns

12ns

15ns

20ns

170mA

160mA

150mA

140mA

70mA

20mA

60mA

10mA

3.3 Added Extended temperature range

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev 3.0

March 2000

- 1 -

12 3 4 5 6 7...9

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