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KM616V1002CT-100 PDF预览

KM616V1002CT-100

更新时间: 2024-11-08 05:50:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
11页 271K
描述
Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

KM616V1002CT-100 数据手册

 浏览型号KM616V1002CT-100的Datasheet PDF文件第2页浏览型号KM616V1002CT-100的Datasheet PDF文件第3页浏览型号KM616V1002CT-100的Datasheet PDF文件第4页浏览型号KM616V1002CT-100的Datasheet PDF文件第5页浏览型号KM616V1002CT-100的Datasheet PDF文件第6页浏览型号KM616V1002CT-100的Datasheet PDF文件第7页 
for AT&T  
CMOS SRAM  
KM616V1002C/CL, KM616V1002CI/CLI  
Document Title  
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Preliminary  
Final  
Draft Data  
Aug. 5. 1998  
Sep. 7. 1998  
Initial release with Preliminary.  
Release to Final Data Sheet.  
1.1. Delete Preliminary.  
1.2. Changed DC characteristics.  
Item  
Previous  
85mA  
83mA  
Changed  
95mA  
93mA  
ICC  
12ns  
15ns  
20ns  
80mA  
90mA  
Rev. 2.0  
Rev. 2.1  
Added 48-fine pitch BGA.  
Changed device part name for FP-BGA.  
Sep. 17. 1998  
Nov. 5. 1998  
Final  
Final  
Item  
Previous  
Changed  
F
Symbol  
Z
ex) KM616V1002CZ -> KM616V1002CF  
Rev. 2.2  
Rev. 3.0  
Changed device ball name for FP-BGA.  
Dec. 10. 1998  
Mar. 2. 1999  
Final  
Final  
Previous  
I/O1 ~ I/O8  
I/O9 ~ I/O16  
Changed  
I/O9 ~ I/O16  
I/O1 ~ I/O8  
1. Added 10ns speed for FP-BGA only.  
2. Changed Standby Current.  
Item  
Previous  
0.3mA  
Changed  
0.5mA  
Standby Current(Isb1)  
3. Added Data Retention Characteristics.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,  
please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 3.0  
March 1999  
- 1 -  

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