Datasheet > KM48S16030T-G/F8

KM48S16030T-G/F8

更新时间： 2024-10-31 22:32:19

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	120K
描述
4M x 8Bit x 4 Banks Synchronous DRAM

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中文翻译

获取价格

数据手册

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KM48S16030T-G/F8 数据手册

Preliminary

KM48S16030

CMOS SDRAM

4M x 8Bit x 4 Banks Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

The KM48S16030 is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits,

fabricated with SAMSUNG¢s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock I/O transactions are possible on every clcok

cycle. Range of operating frequencies, programmable burst

length and programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance mem-

ory system applications.

• MRS cycle with address key programs

-. CAS Latency (2 & 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock.

• Burst Read Single-bit Write operation

• DQM for masking

ORDERING INFORMATION

• Auto & self refresh

Part NO.

MAX Freq. Interface Package

• 64ms refresh period (4K cycle)

KM48S16030T-G/F8

KM48S16030T-G/FH

KM48S16030T-G/FL

KM48S16030T-G/F10

125MHz

54pin

TSOP(II)

100MHz

LVTTL

FUNCTIONAL BLOCK DIAGRAM

LWE

Data Input Register

LDQM

Bank Select

4M x 8

DQi

CLK

ADD

Column Decoder

Latency & Burst Length

LCKE

Programming Register

LWCBR

LRAS

LCBR

LWE

LCAS

LDQM

Timing Register

CLK

CKE

RAS

CAS

DQM

Samsung Electronics reserves the right to

change products or specification without

notice.

REV. 2 Mar. '98

12 3 4 5 6 7...10

中文翻译

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与KM48S16030T-G/F8相关器件

型号	品牌	获取价格	描述	数据表
KM48S16030T-G/FH	SAMSUNG	获取价格	4M x 8Bit x 4 Banks Synchronous DRAM
KM48S16030T-G/FL	SAMSUNG	获取价格	4M x 8Bit x 4 Banks Synchronous DRAM
KM48S16030T-G10	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS
KM48S16030T-GH	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS
KM48S2020BT-F10	SAMSUNG	获取价格	Synchronous DRAM, 2MX8, 7ns, CMOS, PDSO44
KM48S2020BT-G8	SAMSUNG	获取价格	Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44
KM48S2020CT-F10	SAMSUNG	获取价格	Synchronous DRAM, 2MX8, 7ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSO
KM48S2020CT-F8	SAMSUNG	获取价格	Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSO
KM48S2020CT-FL	SAMSUNG	获取价格	Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSO
KM48S2020CT-G10	SAMSUNG	获取价格	Synchronous DRAM, 2MX8, 7ns, CMOS, PDSO44, 0.400 X 0.725 INCH, 0.80 MM PITCH, PLASTIC, TSO