Datasheet > KI1303EDL

KI1303EDL

更新时间： 2024-11-21 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	61K
描述
P-Channel 2.5-V (G-S) MOSFET

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中文翻译

获取价格

数据手册

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KI1303EDL 数据手册

SMD Type

TransistIoCrs

P-Channel 2.5-V (G-S) MOSFET

KI1303EDL

Features

1 Gate

2 Source

3 Drain

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source voltage

Symbol

V^DS

5 secs

Steady State

Unit

-20

Gate-source voltage

V^GS

0.72

0.58

0.67

0.54

Continuous drain current (T^J= 150

)

TA=25

TA=70

Pulsed drain current

I^DM

I^S

2.5

Continuous source current (diode conduction) *

-0.28

-0.24

0.34

0.22

0.29

0.19

Power dissipation *

T^A=25

TA=70

-55 to +150

Operating junction and storage temperature range

* Surface Mounted on 1" X 1" FR4 Board.

T^j,Tstg

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

R^thJA

Typical

315

Maximum

375

Unit

5 sec

Maximum Junction-to-Ambient*

Maximum Junction-to-Foot (Drain)

Steady State

360

430

R^thJF

285

340

* Surface Mounted on 1" X 1" FR4 Board.

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