Datasheet > KDD3670

KDD3670

更新时间： 2024-11-01 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	63K
描述
100V N-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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KDD3670 数据手册

SMD Type

TransistIoCrs

100V N-Channel PowerTrench MOSFET

KDD3670

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Features

34 A, 100 V. RDS(ON) = 32m @ VGS = 10 V

R^DS(ON)= 35m @ VGS = 6 V

Low gate charge (57 nC typical)

Fast switching speed

0.127

max

+0.1

0.80

-0.1

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

+0.1

0.60

-0.1

1. Gate

2.3

4.60

+0.15

-0.15

2. Drain

3. Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

100

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous (Note 1)

Drain Current Pulsed

I^D

100

Power dissipation @ T^C=25

Power dissipation @ T^a=25

Power dissipation @ Ta=25

(Note 1)

3.8

(Note 1a)

(Note 1b)

1.6

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

T^J, TSTG

-55 to 175

1.8

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