Datasheet > KDB3632(FDB3632)

KDB3632(FDB3632)

更新时间： 2024-06-27 12:14:09

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科信 - KEXIN		/
页数	文件大小	规格书
2页	53K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KDB3632(FDB3632) 数据手册

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

KDB3632^(FDB3632)

TO-263

Unit: mm

Features

rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A

Qg(tot) = 84nC (Typ.), VGS = 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low QRR Body Diode

+0.1

-0.1

0.1max

1.27

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Symbol

V^DSS

Rating

100

Unit

V^GSS

Drain current-Continuous T^C111

T^A=25

Power dissipation

310

2.07

Derate above 25

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

RèJA

R^èJC

T^ch

0.48

175

Storage temperature

Tstg

-55 to +175

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